SiC Diode With Deep Superjunction To Achieve High Current Density & Breakdown Voltage (ARD/261) | ASTRI - Hong Kong Applied Science And Technology Research Institute Company Limited

Project Title:

SiC Diode with Deep Superjunction to Achieve High Current Density & Breakdown Voltage (ARD/261)

Project Reference:

ARD/261

Project Type:

Seed

Project Period:

01 / 03 / 2021 - 28 / 02 / 2022

Funds Approved (HK$’000):

2,799.1

Project Coordinator:

Dr Chenyue MA

Deputy Project Coordinator:

Deliverable:

Research Group:

Sponsor:

R.C.L. SEMICONDUCTORS LIMITED
HIGH TECH TECHNOLOGY LIMITED

Description:

Compared with silicon, SiC is one of the most promising materials for high power applications because of its superiority in switching frequency, thermal conductivity, and voltage handling capabilities. Although SiC diode is available in the market for the low and medium voltage (650V & 1200V) applications, the conventional structure shows a substantial increment of on-resistance (Ron) when extended to high voltage application (1700V or higher), which reduces current density, enlarges die-size and increases cost. Therefore, new structures are urgent to achieve high current density under high breakdown voltage (BV). Superjunction (SJ) structure is expected to break the SiC material limits to achieve superior trade-off of Ron and BV. This project proposes to develop a SiC diode with combined trench and superjunction structure. Comparing to the traditional Schottky barrier diode (SBD) or merged PIN diode (MPS), the proposed structure is expected to achieve high BV without sacrificing the forward current density. The fabrication process recipe can also be extended to other SiC power devices like JFET and MOSFET. The success of this project would not only bring SiC diode technology breakthrough, but also bring SiC semiconductor industry to HK.

Co-Applicant:

Keywords:

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